Investigation of Double-Emitter Reduced-Surface-Field Horizontal Current Bipolar Transistor Breakdown Mechanisms (CROSBI ID 641564)
Prilog sa skupa u zborniku | izvorni znanstveni rad | međunarodna recenzija
Podaci o odgovornosti
Koričić, Marko ; Žilak, Josip ; Suligoj, Tomislav
engleski
Investigation of Double-Emitter Reduced-Surface-Field Horizontal Current Bipolar Transistor Breakdown Mechanisms
Breakdown behavior of double-emitter reduced-surface-field horizontal current bipolar transistor is extensively analyzed by measurements and 3D device simulations. By the addition of the 2nd drift region, BVCEO of double-emitter structure is improved from 12 V up to 36 V and can be tuned by the length of the drift region. By increasing the length of the drift region, positive feedback loop of the common-emitter soft-breakdown can be completely broken making the BVCEO independent on transistor current gain. Transistors with BVCEO and BVCBO equal to the collector-substrate breakdown voltage are demonstrated. We also report that base current reversal in forced-VBE measurement does not occur and cannot be used for accurate determination of BVCEO of analyzed structures.
Horizontal Current Bipolar Transistor; breakdown voltage; BiCMOS technology; drift region; electrostatic shielding
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Podaci o prilogu
25-28.
2016.
objavljeno
Podaci o matičnoj publikaciji
Proceedings of the 2016 Bipolar/BiCMOS Circuits and Technology Meeting
Institute of Electrical and Electronics Engineers (IEEE)
Podaci o skupu
2016 Bipolar/BiCMOS Circuits and Technology Meeting
predavanje
26.09.2016-27.09.2016
New Brunswick (NJ), Sjedinjene Američke Države