engleski

A Novel Horizontal Current Bipolar Transistor for Vertical BiCMOS Integration

A new Horizontal Current Bipolar Transistor (HCBT), suitable for integration with pillar-like CMOS devices into vertical BiCMOS, is fabricated and characterized. It is processed by a simple technology with only 5 lithography masks, using CMP and etch-back technique for isolation and the reduction of parasitic capacitances, and self-aligned base implantation and polysilicon emitter for optimized doping profiles. The transistors with the cut off frequency - breakdown voltage product of 69.5 GHzV and Early voltage greater than 700 V are obtained.

BiCMOS integrated circuits; biplar transistors; slicon on insulator technology

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