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Recombination Process and Holes and Electrons Lifetimes

In the semiconductor with indirect band gap, such as silicon, recombination of a deep center determines the lifetime of electrons and holes. In this article lifetime is calculated in dependence of both recombination processes, Shockley-Read-Hall and Auger. The calculations of lifetime are made for gold in silicon, taking into account both deep levels and neglecting one of them. It is found that in the most cases gold, although having two deep levels, will act as a single level deep impurity. Exceptions are high injection levels where both deep energy levels have influence on recombination process. According to the measured values of lifetime it is confirm that the capture coefficients are temperature dependent and that the both recombination processes, Shockley-Read-Hall and Auger have significant influence on a lifetime.

recombination; deep impurity; lifetime

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