Napredna pretraga

Pregled bibliografske jedinice broj: 829864

Low temperature deposition of a-SiC:H thin films applying a dual plasma source process


Frischmuth, Tobias; Schneider, Michael; Bogdanović-Radović, Ivančica; Siketić, Zdravko; Maurer, Danijel; Grille, Thomas; Schmid, Urlich
Low temperature deposition of a-SiC:H thin films applying a dual plasma source process // Thin solid films, 616 (2016), 164-171 doi:10.1016/j.tsf.2016.07.030 (međunarodna recenzija, članak, znanstveni)


Naslov
Low temperature deposition of a-SiC:H thin films applying a dual plasma source process

Autori
Frischmuth, Tobias ; Schneider, Michael ; Bogdanović-Radović, Ivančica ; Siketić, Zdravko ; Maurer, Danijel ; Grille, Thomas ; Schmid, Urlich

Izvornik
Thin solid films (0040-6090) 616 (2016); 164-171

Vrsta, podvrsta i kategorija rada
Radovi u časopisima, članak, znanstveni

Ključne riječi
Hydrogenated amorphous silicon carbide ; Inductively coupled plasma enhanced chemical vapor deposition ; Microelectromechanical systems ; Young's modulus ; Hardness ; Mass effusion ; Surface roughness ; Fourier transform infrared spectroscopy

Sažetak
The utilization of silicon carbide (SiC) thin films is of great interest whenever a high robustness is requested for MEMS/NEMS-based devices, which are operated in harsh environments beyond the applicability of standard silicon technology. Hydrogenated amorphous SiC (a-SiC:H) is especially attractive for these scenarios, as it can be deposited at temperatures lower than 400 °C while still being beneficial for enhanced device performance. Furthermore, the thin film properties can be tailored to a great extent during synthesis or via post-deposition annealing. This study reports on the deposition of a-SiC:H thin films at a substrate temperature of 250 °C applying a dual plasma process by superimposing a radio frequency (RF) plasma which excites the substrate table to an inductively-coupled RF plasma. This auxiliary plasma source has a huge impact on the resulting thin film properties due to the interaction of various opposing processes during film growth. To understand these processes, the layer composition was determined using time-of-flight elastic recoil detection analyses, Fourier transform infrared spectroscopy and by mass effusion measurements up to 1000 °C, thus revealing changes in chemical composition, but also the power dependent incorporation of gaseous species from the plasma. This, for example, allows modification of the residual stress ranging from nearly stress free to highly compressively stressed layers of more than − 2 GPa, Young's modulus values ranging from about 168 GPa down to 48 GPa, but also greatly affects the surface topography which can be adjusted to a very low root mean squared roughness of less than 0.1 nm.

Izvorni jezik
Engleski

Znanstvena područja
Fizika



POVEZANOST RADA


Projekt / tema
098-1191005-2876 - Procesi interakcije ionskih snopova i nanostrukture (Milko Jakšić, )

Ustanove
Institut "Ruđer Bošković", Zagreb

Časopis indeksira:


  • Current Contents Connect (CCC)
  • Web of Science Core Collection (WoSCC)
    • Science Citation Index Expanded (SCI-EXP)
    • SCI-EXP, SSCI i/ili A&HCI
  • Scopus


Citati