engleski

Estimation of Deep Trap Concentration Using Capacitance Voltage Measurements

It is experimentally observed that the capacitance of a reverse biased pn junction is frequency dependent if such a junction has a certain amount of a deep impurity. This effect is described in literature, and a simple model of a depletion layer capacitance as a function of a deep impurity is derived. In this model a shallow and deep impurities are of the opposite types. Here, we have the deep impurity of the same type as the shallow impurity. The existing model was adapted to our situation and used in this work. According to the experimentally obained values of depletion layer capacitance as a function of a reverse bias and frequency the presence of a deep trap is proved, and its concentration is estimated.

deep impurity; depletion layer capacitance

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