engleski

Effect of Extrinsic Base on the High-Frequency Performance of Lateral Bipolar Transistors

The extrinsic base influences the high frequency performance of Lateral Bipolar Transistors (LBT) by increasing the effective collector-base capacitance (C_BC) and decreasing the effective collector cross-section area (A_C). The increased C_BC causes the increase of time constants and the degradation of f_T and f_max. The decreased A_C causes the Kirk effect to occur at lower collector current degrading f_T and f_max further. These effects are analyzed by 2D simulations on Horizontal Current Bipolar Transistor (HCBT) Structure.

lateral bipolar transistor; collector-base capacitance; Kirk effect

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