Efficient Monte Carlo Simulation of Tunnel Currents in MOS Structures (CROSBI ID 483629)
Prilog sa skupa u zborniku | izvorni znanstveni rad | međunarodna recenzija
Podaci o odgovornosti
Grgec, Dalibor ; Vexler, M.I. ; Jungemann, C. ; Meinerzhagen, B.
engleski
Efficient Monte Carlo Simulation of Tunnel Currents in MOS Structures
In this paper, a new efficient model for the evaluation of tunnel currents in MOS struactures for Monte Carlo device simulation is presented. Several methods for tunneling probability calculation can be used and the model has the important advantage of being compatible with the modified local density approximation for quantum correction of the carrier density. Implementation of the model in a Monte Carlo device simulaton is explained. Simulations of test MOSFETs and comparisons with measurements are presented.
Monte Carlo simulation; tunnel currents; carrier density; local density approximation
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Podaci o prilogu
179-182-x.
2002.
objavljeno
Podaci o matičnoj publikaciji
Proceedings of the ESSDERC 2002
Baccarani, G.; Gnani, E.; Rudan, M.
Bolonja: Alma Mater Studiorum Università di Bologna
Podaci o skupu
32nd European Solid-State Device Research Conference
predavanje
24.09.2002-26.09.2002
Firenca, Italija