engleski

A New Compact Horizontal Current Bipolar Transistor (HCBT) Fabricated in (110) Wafers

A very compact Horizontal Current Bipolar Transistor (HCBT) is fabricated and tested. It is processed in <110> bulk Si substrate where the <111> crystal plane is perpendicular to the surface and is used as the active transistor sidewall. In this way, the sidewall roughness can be minimised by using crystallographic dependent etchants making the intrinsic transistor doping process highly controllable and repeatable. Hence, unlike in the existing lateral bipolar transistors, the optimum dopant contribution can be achieved what will improve transistors high-frequency performance. Additionally, HCBT is processed in simple technology with only 5 litography masks making this structure attractive for low-cost, low-power high-performance bipolar/BiCMOS applications. The improvement of f_T and f_max up to 24 and 50 GHz, respectively, can be achieved by using HCBT technology.

lateral bipolar transistor; crystallographic dependent etching

nije evidentirano