IBIC studies of structural defect activity in different polycrystalline silicon material (CROSBI ID 483622)
Prilog sa skupa u zborniku | sažetak izlaganja sa skupa | međunarodna recenzija
Podaci o odgovornosti
Borjanović, Vesna ; Jakšić, Milko ; Pastuović, Željko ; Pivac, Branko ; Katz, Eugene
engleski
IBIC studies of structural defect activity in different polycrystalline silicon material
In the research of semiconducting materials, the ion beam induced charge collection (IBIC) technique can provide interesting and straightforward information about the different electronic device characteristics. This nuclear microprobe technique was used for the qualitative analysis of the spatial distribution of charge collection efficiency in several types of poly-Si material. We studied the influence of light impurities (oxygen, carbon) on electrical activity of extended defects. It is shown that oxygen segregating close to structural defects influences their electrical activity, while for carbon we did not observe the same effect. We demonstrated that IBIC can be applied to provide spatial information about the position of electrically active defects and its activation during subsequent processing.
silicon ; defects ; oxygen ; grain boundaries ; IBIC
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Podaci o prilogu
42-42.
2002.
objavljeno
Podaci o matičnoj publikaciji
Final programme and book of abstracts
Leisch, M. ; Winkler, A.
Graz: HTU GmbH
Podaci o skupu
9th Joint Vacuum Conference
predavanje
16.07.2002-20.07.2002
Leibnitz, Austrija