engleski

IBICC studies of polycrystalline silicon

Ion beam induced charge collection (IBICC) tech-nique can provide interesting and straightforward informa-tion about the semiconducting materials and different electronic device characteristics. This nuclear microprobe technique was used for the qualitative analysis of charge collection efficiency spatial distribution in several types of poly-Si material. We studied the influence of light impuri-ties (oxygen, carbon) present in material on electrical ac-tivity of extended defects. It is shown that oxygen segregating close to structural defects influences their electrical activity, while for carbon we did not observe the same effect. We demonstrated that IBICC technique could be applied to provide spatial information about the position of electrically active defects, and/or their activation or deactivation during subsequent processing.

silicon ; defects ; solar cells ; IBIC

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