Impact of the Emitter Polysilicon Thickness on the Performance of High-Linearity Mixers with Horizontal Current Bipolar Transistors (CROSBI ID 637015)
Prilog sa skupa u zborniku | izvorni znanstveni rad | međunarodna recenzija
Podaci o odgovornosti
Žilak, Josip ; Koričić, Marko ; Mochizuki, Hidenori ; Morita, So-ichi ; Suligoj, Tomislav
engleski
Impact of the Emitter Polysilicon Thickness on the Performance of High-Linearity Mixers with Horizontal Current Bipolar Transistors
The impact of the emitter polysilicon etching in Tetramethyl Ammonium Hydroxide (TMAH) on the characteristics of high-linearity mixers fabricated with the low-cost Horizontal Current Bipolar Transistor (HCBT) is analyzed. During emitter formation, the thick layer of a-Si is deposited over the whole wafer, which is then etched-back in the TMAH. The emitter thickness depends on the TMAH etching time and impacts the HCBT's electrical characteristics. Active down-converting mixers with open-collector topology based on Gilbert cell are fabricated with two types of HCBTs with different TMAH etching time using the lowest-cost HCBT technology with CMOS n-well region for n-collector. Measurements of mixers' characteristics are done on-wafer by using the multi-contact probes. The mixers achieve maximum IIP3 of 20.2 dBm and conversion gain of 4 dB. Differences in performance characteristics between two mixer types are small indicating that HCBT's circuit performance sensitivity on the emitter thickness variations is relatively small.
Horizontal Current Bipolar Transistor ; emitter polysilicon ; mixer ; linearity ; conversion gain
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Podaci o prilogu
40-44.
2016.
objavljeno
Podaci o matičnoj publikaciji
Proceedings of the 39th International Convention MIPRO 2016
Biljanović, Petar
Rijeka: Hrvatska udruga za informacijsku i komunikacijsku tehnologiju, elektroniku i mikroelektroniku - MIPRO
1847-3938
Podaci o skupu
MIPRO 2016
predavanje
30.05.2016-03.06.2016
Opatija, Hrvatska