engleski

An approach to the problem of the displacement energy threshold in semiconductors

The results of calculations of the mean displacement energy of all the most important III-V, II-VI, and elemental (group IV) semiconductors based on the theory of the formation of simple defects in semiconductors, which has been elaborated by Van Vechten (1974-77), are presented. The theory is based on thermodynamic arguments, the dielectric two-band model, and macroscopic lattice distortion measurements (10 References).

atom displacement ; energy treshold

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