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Pregled bibliografske jedinice broj: 820338

Closely packed Ge quantum dots in ITO matrix: influence of Ge crystallization on optical and electrical properties


Car, Tihomir; Nekić, Nikolina; Jerčinović, Marko; Salamon, Krešimir; Bogdanović-Radović, Ivančica; Delač Marion, Ida; Dasović, Jasna; Dražić, Goran; Ivanda, Mile; Bernstorff, Sigrid et al.
Closely packed Ge quantum dots in ITO matrix: influence of Ge crystallization on optical and electrical properties // Materials research express, 3 (2016), 6; 65003-1 doi:10.1088/2053-1591/3/6/065003 (međunarodna recenzija, članak, znanstveni)


Naslov
Closely packed Ge quantum dots in ITO matrix: influence of Ge crystallization on optical and electrical properties

Autori
Car, Tihomir ; Nekić, Nikolina ; Jerčinović, Marko ; Salamon, Krešimir ; Bogdanović-Radović, Ivančica ; Delač Marion, Ida ; Dasović, Jasna ; Dražić, Goran ; Ivanda, Mile ; Bernstorff, Sigrid ; Pivac, Branko ; Kralj, Marko ; Radić, Nikola ; Buljan, Maja ;

Izvornik
Materials research express (2053-1591) 3 (2016), 6; 65003-1

Vrsta, podvrsta i kategorija rada
Radovi u časopisima, članak, znanstveni

Ključne riječi
Ge ; ITO ; electrical properties ; low crystallization temperature

Sažetak
In the present work, a method for the low-temperature production of the material consisting of closely packed Ge QDs embedded in ITO matrix is described. The films are produced by magnetron sputtering deposition followed by thermal annealing. It is shown that the conductivity and optical properties of the films depend on the structure, Ge content in the ITO matrix as well as on the annealing conditions. The conductivity of the films changes up to seven orders of magnitude in dependence on the annealing conditions, and it shows transformation from semiconductor to metallic behavior. The optical properties are also strongly affected by the preparation and annealing conditions, so both conductivity and optical properties can be controllably manipulated. In addition, the crystallization of Ge is found to occur already at 300 °C, which is significantly lower than the crystallization temperature of Ge produced by the same method in silica and alumina matrices.

Izvorni jezik
Engleski

Znanstvena područja
Fizika



POVEZANOST RADA


Projekt / tema
098-0982886-2866 - Temeljna svojstva nanostruktura i defekata u poluvodičima i dielektricima (Branko Pivac, )
HRZZ-IP-2013-11-6135 - Poluvodičke kvantne strukture za napredne sklopove (Branko Pivac, )

Ustanove
Institut "Ruđer Bošković", Zagreb

Časopis indeksira:


  • Current Contents Connect (CCC)
  • Web of Science Core Collection (WoSCC)
    • Science Citation Index Expanded (SCI-EXP)
    • SCI-EXP, SSCI i/ili A&HCI
  • Scopus


Citati