engleski

SAXS study of oxygen precipitation in silicon

Czochralski-grown dislocation-free silicon is used almost exclusively in the semiconductor industry for the manufacture of VLSI devices. Such material contains small quantities (~ 10 ppm) of dissolved oxygen, which can have a crucial effect on the devices produced. Therefore it is of great importance to study its precipitation in silicon matrix upon given thermal treatment. The small angle X-ray scattering (SAXS) technique was used to study oxygen precipitation in monocrystalline silicon samples. 16 keV radiation has been used to overcome the problems of high absorption at low energies. Due to low scattering intensity, the analysis was done using Guinier approximation with only one particle size. A series of samples has been prepared with controlled sequence of oxygen nucleation and precipitation phase and measured with SAXS. It is shown that this low contrast changes in standard wafers can be investigated using synchrotron radiation.

SAXS; oxygen; silicon; precipitation

nije evidentirano