engleski

Characterisation of grains in tungsten-carbon films

Tungsten-carbon thin films were deposited onto monocrystalline silicon substrates by reactive sputtering (argon + benzene) in a two-source device . Substrates were in a fixed position relative to the two adjacent cylindrical magnetrons. Benzene partial pressure was 3,75% of the total working gas pressure held at 4 Pa. A series of samples were prepared, with the substrate temperature held at RT, 200°C, and 400°C, respectively, and the substrate potential held at floating potential or biased -70 V with respect to discharge plasma, for each substrate temperature. The generated film consists of densily packed tungsten cardbide grains with an amorphous, carbon rich matrix in between. Applying two dimensional CCD detector, both SAXS and GISAXS were used in order to determine shape, size and orientation of the grains in the film. Lower substrate temperatures resulted in elipsoid-shaped grains oriented in the direction of the two sources, while higher temperatures produced roughly spherical ones.

GISAXS; SAXS; tungsten carbide

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