engleski

Grazing incidence small angle x-ray scattering study of irradiation induced defects in monocrystalline silicon

Czochralski grown monocrystalline silicon samples have been 31 keV H2+ ion implanted at room temperature and at high doses (beam current density 1mA/cm2) and in this way a high concentration of defects is introduced. At higher doses and/or temperatures also voids (bubbles) filled with H2 are produced. The presence of hydrogen bonded to silicon is partly inhibiting growth of bigger bubbles, and it is controlling the shape of the vacancies too. Hydrogen implanted in silicon forms structural defects, including vacancylike ones, which can, depending on the dose and the implanting energy, amount to complete amorphysation of silicon. There are several bonds (and different positions relative to the neighboring Si atoms) that hydrogen can form. To investigate the dynamics of the bubble formation, the samples have been annealed isochronally at discrete temperatures up to 900OC.

SAXS; Silicon; inplantation; Hydrogen

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