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On the hole effective mass and the free hole statistics in the wurtzite GaN (CROSBI ID 94612)

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Šantić, Branko On the hole effective mass and the free hole statistics in the wurtzite GaN // Semiconductor science and technology, 18 (2003), 219-224-x

Podaci o odgovornosti

Šantić, Branko

engleski

On the hole effective mass and the free hole statistics in the wurtzite GaN

Influences of the band splitting and band anisotropy on the statistics of free holes and on the electrical transport in p-type GaN are studied. Published experimental results for the hole effective mass are spanned over a wide range mh=0.3-2.2mo. Based on the theoretical data, the reliable values of the pertinent effective masses are determined. The distribution of free holes among the three closely spaced valence bands is examined. Around room temperature, the density-of-states effective mass is calculated to be mh3ds=1.25mo. Depending on the direction of electrical current, the roles of different valence bands are distinctive. The holes from the A-band are prevailing in the transversal direction. However, the holes from the C-band dominate the transport along the c-direction, although their relative concentration is the smallest. This effect could play a role in the optoelectronic devices.

GaN; semiconductors; statistics; hole; effective-mass; transport; p-type

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Podaci o izdanju

18

2003.

219-224-x

objavljeno

0268-1242

Povezanost rada

Fizika

Indeksiranost