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Pregled bibliografske jedinice broj: 819365

NIR laser light sensors based on nanosilicon/organic semiconductor junctions for telecom applications


Đerek, Vedran; Glowacki, Eric Daniel; Sariciftci, Niyazi Serdar; Ivanda, Mile
NIR laser light sensors based on nanosilicon/organic semiconductor junctions for telecom applications // COST MP1401 Annual Conference and 2nd MC meeting Conference proceedings
Zadar, Croatia, 2016. (predavanje, međunarodna recenzija, sažetak, znanstveni)


Naslov
NIR laser light sensors based on nanosilicon/organic semiconductor junctions for telecom applications

Autori
Đerek, Vedran ; Glowacki, Eric Daniel ; Sariciftci, Niyazi Serdar ; Ivanda, Mile

Vrsta, podvrsta i kategorija rada
Sažeci sa skupova, sažetak, znanstveni

Izvornik
COST MP1401 Annual Conference and 2nd MC meeting Conference proceedings / - , 2016

Skup
COST MP1401 Annual Conference and 2nd MC meeting

Mjesto i datum
Zadar, Croatia, 12-15.04.2016.

Vrsta sudjelovanja
Predavanje

Vrsta recenzije
Međunarodna recenzija

Ključne riječi
NIR; photodiode; telecom; hybrid; silicon; organic; heterojunction

Sažetak
Infrared sensitivity of the silicon photodiodes is limited by the 1.11 eV band-gap of bulk silicon. Hybrid junctions of silicon and organic semiconductor for use in photodiodes show promise in extending the range of spectral sensitivity of silicon. Extension of spectral sensitivity to infrared wavelengths beyond 1250 nm, while keeping the CMOS compatibility would be of great importance to possible telecom uses. By vacuum-deposition of thin films of organic semiconductors on silicon substrates it is possible to vary the barrier height of the heterojunction, and thus also the spectral response of the devices. By using micro and nano-structured silicon substrates, electronic and optical properties of structured substrates can be used to improve the device performance in comparison to using flat substrates. Heterojunction photodiodes based on thin films of hydrogen-bonded pigment tyrian purple (6, 6'- dibromoindigo) formed on silicon substrates by vacuum evaporation show sub silicon-bandgap IR sensitivity up to 2500 nm with responsivity of ~5 mA/W in the telecom C-band [1, 2]. We show how micro- and nano-structuring of silicon substrates prior to vacuum evaporation of organic layer significantly improves the responsivity of hybrid silicon-organic photodiodes. [1] M. Bednorz, G. J. Matt, E. D. Głowacki, T. Fromherz, C. J. Brabec, M. C. Scharber, H. Sitter, and N. S. Sariciftci, Org. Electron. 14 (2013), 1344 [2] V. Đerek, E. Głowacki, M. Sytnyk, W. Heiss, M. Marciuš, M. Ristić, M. Ivanda, and N.S. Sariciftci, Applied Physics Letters, 107 (2015) 083302

Izvorni jezik
Engleski

Znanstvena područja
Fizika, Kemija



POVEZANOST RADA


Projekt / tema
098-0982904-2898 - Fizika i primjena nanostruktura i volumne tvari (Mile Ivanda, )
IP-2014-09-7046

Ustanove
Institut "Ruđer Bošković", Zagreb