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Hybrid nano-slicon/organic semiconductor junctions for NIR optoelectronics


Đerek, Vedran; Glowacki, Eric Daniel; Sariciftci, Niyazi Serdar; Ivanda, Mile
Hybrid nano-slicon/organic semiconductor junctions for NIR optoelectronics // International Symposium for the 80th Birthday of Prof. Alan J. Heeger Book of abstracts
Linz, Austrija, 2016. (poster, međunarodna recenzija, sažetak, znanstveni)


Naslov
Hybrid nano-slicon/organic semiconductor junctions for NIR optoelectronics

Autori
Đerek, Vedran ; Glowacki, Eric Daniel ; Sariciftci, Niyazi Serdar ; Ivanda, Mile

Vrsta, podvrsta i kategorija rada
Sažeci sa skupova, sažetak, znanstveni

Izvornik
International Symposium for the 80th Birthday of Prof. Alan J. Heeger Book of abstracts / - , 2016

Skup
International Symposium for the 80th Birthday of Prof. Alan J. Heeger (Nobelprize 2000)

Mjesto i datum
Linz, Austrija, 21.03.2016

Vrsta sudjelovanja
Poster

Vrsta recenzije
Međunarodna recenzija

Ključne riječi
Hybrid; organic; silicon; semiconductor; junction; NIR; photodiode

Sažetak
Infrared sensitivity of the silicon photodiodes is limited by the 1.11 eV band-gap of bulk silicon. Hybrid junctions of silicon and matching organic semiconductor for photodiodes show promise in extending the range of spectral sensitivity of silicon. Extension of spectral sensitivity to infrared wavelengths beyond 1250 nm, while keeping the CMOS compatibility would be of great importance to possible telecom or other optoelectronic uses. By vacuum-deposition of thin films of organic semiconductors on silicon substrates it is possible to vary the barrier height of the heterojunction, and thus also the spectral response of the devices. By using micro and nano- structured silicon substrates, electronic and optical properties of structured substrates can be used to improve the device performance in comparison to using flat substrates. Heterojunction photodiodes based on thin films of hydrogen-bonded pigment tyrian purple (6, 6'- dibromoindigo) formed on silicon substrates by vacuum evaporation show sub silicon-bandgap IR sensitivity up to 2500 nm with responsivity of ~5 mA/W in the telecom C-band [1, 2]. We show how micro- and nano- structuring of silicon substrates prior to vacuum evaporation of organic layer significantly improves the responsivity of hybrid silicon-organic photodiodes. [1] M. Bednorz, G. J. Matt, E. D. Głowacki, T. Fromherz, C. J. Brabec, M. C. Scharber, H. Sitter, and N. S. Sariciftci, Org. Electron. 14 (2013), 1344 [2] V. Đerek, E. Głowacki, M. Sytnyk, W. Heiss, M. Marciuš, M. Ristić, M. Ivanda, and N.S. Sariciftci, Applied Physics Letters, 107 (2015) 083302

Izvorni jezik
Engleski

Znanstvena područja
Fizika, Kemija



POVEZANOST RADA


Projekt / tema
098-0982904-2898 - Fizika i primjena nanostruktura i volumne tvari (Mile Ivanda, )
IP-2014-09-7046

Ustanove
Institut "Ruđer Bošković", Zagreb