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Pregled bibliografske jedinice broj: 81891

Raman Scattering And Stimulated Light Emission From Nanosized Silicon Crystals


Ivanda, Mile; Kiefer, Wolfgang; White, C. W.; Desnica, Uroš
Raman Scattering And Stimulated Light Emission From Nanosized Silicon Crystals // Proceedings of the XVIIIth International Conference on Raman spectroscopy / Janos Mink, Gyorgy Jalsovszky, Gabor Keresztury (ur.).
Chichester: John Wiley, 2002. str. 501-502 (poster, međunarodna recenzija, cjeloviti rad (in extenso), znanstveni)


Naslov
Raman Scattering And Stimulated Light Emission From Nanosized Silicon Crystals

Autori
Ivanda, Mile ; Kiefer, Wolfgang ; White, C. W. ; Desnica, Uroš

Vrsta, podvrsta i kategorija rada
Radovi u zbornicima skupova, cjeloviti rad (in extenso), znanstveni

Izvornik
Proceedings of the XVIIIth International Conference on Raman spectroscopy / Janos Mink, Gyorgy Jalsovszky, Gabor Keresztury - Chichester : John Wiley, 2002, 501-502

Skup
XVIIIth International Conference on Raman Spectroscopy

Mjesto i datum
Budimpešta, Mađarska, 25.-30.08.2002

Vrsta sudjelovanja
Poster

Vrsta recenzije
Međunarodna recenzija

Ključne riječi
Nc-Si; Stimulated emission; Optical gain; Nanoparticles; Raman

Sažetak
Silicon, as an indirect gap semiconductor, is a poor light emitter and, therefore, has been considered as unsuitable for optoelectronic application. Recent discovery of optical gain in silicon nanocrystals promises soon fabrication of silicon laser [1]. Here we provide further evidences for the optical gain in nanocrystaline silicon embedded in quartz matrix by using continuous wave laser excitation. The silicon nanocrystals were produced by high energy Si+-ion implantation into quartz substrate down to a depth of 1 mm followed by high-temperature annealing at 1100 oC for 1 hour. The Raman scattering experiments were carried out at room temperature using 514.5 nm laser excitation and triple monochromator. The optical gain was measured on the basis of the variable strip length method using the krypton ion laser excitation line at 647 nm ...

Izvorni jezik
Engleski

Znanstvena područja
Fizika



POVEZANOST RADA


Projekt / tema
0098020
0098022

Ustanove
Institut "Ruđer Bošković", Zagreb

Autor s matičnim brojem:
Mile Ivanda, (135746)
Uroš Desnica, (9386)