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Nanostructural properties of amorphous silicon carbide by GISAXS and optical spectroscopy

The nanostructural properties of nonstehiometric hydrogenated amorphous silicon carbide thin films, deposited by magnetron sputtering in a wide range of hydrogen and carbon concetration, were anlysed by GISAXS (Grazin Incidence Small Angle X-ray Scattering). The film compositon and density were estimated by combining vibrational spectroscopy, RBS (Rutherford Backscattering Spectrometry) and ERDA (Elstic Recoil Detection Analysis). It was found that by increasing carbon and hydrogen concentration, the film density decrese, indicating the increase of voids contribution. The GISAXS was performed on ELETTRA synchrotron radiation source, Trieste (Italy). The obtained results show the presence of "particles" with varation in mean dimensions between 1, 7 and 2, 5 nm and broad size distribution. The size of "particles", most probably large voids or voids agglomerates, increases with carbon to silicon ratio and decreses with hydrogen concentration.

amorphous silicon carbide; nano-structure; GISAXS; RBS; ERDA; FTIR; Raman

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