Comparative studies of EFG ribbon poly-Si grown by different procedures (CROSBI ID 94545)
Prilog u časopisu | izvorni znanstveni rad | međunarodna recenzija
Podaci o odgovornosti
Pivac, Branko ; Borjanović, Vesna ; Kovačević, Ivana ; Evtody, B.N. ; Katz, E.
engleski
Comparative studies of EFG ribbon poly-Si grown by different procedures
The impurity content in EFG polycrystalline silicon materials grown by different procedures from graphite and quartz crucible has been extensively studied using FTIR technique. It is shown that the oxygen content in the material is much more dependent on the growth atmosphere at meniscus than on the type of crucible. In all samples the carbon content remains supersaturated up to very high temepratures of annealing, not affected by the oxygen presence.
polycrystalline silicon ; edge-defined film-fed growth ; defects ; oxygen ; carbon ; deep levels ;
EMRS 2001 Symposium E: Crystalline Silicon for Solar Cells
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Podaci o izdanju
72 (1-4)
2002.
165-171
objavljeno
0927-0248
10.1016/S0927-0248(01)00161-1