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Pregled bibliografske jedinice broj: 810286

Phase map, composition and resistivity of reactively magnetron sputtered and annealed Ta– N films


Salamon, Krešimir; Radić Nikola; Bogdanović- Radović, Ivančica; Očko, Miroslav
Phase map, composition and resistivity of reactively magnetron sputtered and annealed Ta– N films // Journal of physics. D, Applied physics, 49 (2016), 19; 195301-1 doi:10.1088/0022-3727/49/19/195301 (međunarodna recenzija, članak, znanstveni)


Naslov
Phase map, composition and resistivity of reactively magnetron sputtered and annealed Ta– N films

Autori
Salamon, Krešimir ; Radić Nikola ; Bogdanović- Radović, Ivančica ; Očko, Miroslav

Izvornik
Journal of physics. D, Applied physics (0022-3727) 49 (2016), 19; 195301-1

Vrsta, podvrsta i kategorija rada
Radovi u časopisima, članak, znanstveni

Ključne riječi
Tantalum nitride ; magnetron sputtering ; thermal annealing ; phase composition ; resistivity

Sažetak
Thin films of tantalum nitride (Ta–N) have been prepared by reactive magnetron deposition under various nitrogen partial pressures pN2=0-1 and subsequently annealed (Ta = 450–950 °C). The structure, density, composition and electrical resistivity of the prepared films were systematically investigated. A pN2-Ta phase map was constructed from the results of structural analysis. With increasing of pN2 from 0 to 0.2, a single-phase or two-phase mixture films of tetragonal Ta, Ta2N (Ta > 450 °C), eps-TaN (Ta > 850 °C), theta-TaN (Ta > 850 °C) and fcc delta-TaN are sequentially observed. For pN2 = 0.25–0.45, the as grown and annealed films exhibit delt-TaN structure. Amorphous films grown in the pN2 = 0.45–0.75 range crystallize as cubic Ta2N3 upon annealing at Ta > 650 °C or as delt-TaN at Ta > 850 °C. A cubic Ta2N3 is grown at highest pN2 (>0.85), which decomposes to delt-TaN at Ta > 850 °C. The N /Ta atomic ratio in the film linearly increases for pN2 = 0–0.5, ranging from 0 to 2.1, while the mass density monotonously decreases with pN2. Upon annealing, a part of N atoms outdiffuses from the films deposited at pN2 > 0.3. The electrical resistivity strongly depends on both pN2 and Ta. However, in the as grown and annealed delt-TaN films the resistivity was of the order of 100–1000 µOhmcm. In these films, a correlation between the resistivity and the average number of defects (Ta vacancies and N atom excess) is observed. Finally, the influence of thermally introduced oxygen on the films resistivity has been revealed.

Izvorni jezik
Engleski

Znanstvena područja
Fizika



POVEZANOST RADA


Ustanove
Institut za fiziku, Zagreb,
Institut "Ruđer Bošković", Zagreb

Časopis indeksira:


  • Current Contents Connect (CCC)
  • Web of Science Core Collection (WoSCC)
    • Science Citation Index Expanded (SCI-EXP)
    • SCI-EXP, SSCI i/ili A&HCI
  • Scopus


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