engleski

Closely packed Ge quantum dots in ITO matrix: influence of Ge crystallization on optical and electric properties

Simple methods for fabrication of semiconductor quantum dots in transparent oxide matrices play an important role in various nanotechnology applications. Here we present a method for the low-temperature production of closely packed crystalline Ge QDs embedded in ITO matrix. The films are produced by magnetron sputter deposition followed by thermal annealing. The crystallization of Ge is found to occur already at 300°C, which is significantly lower than the crystallization temperature of Ge produced by the same method in silica or alumina matrices. The dependencies of the conductivity of the films and their optical properties on the materials structure, Ge content in the ITO matrix and the annealing conditions are demonstrated. The crystallization of Ge causes a huge increase in the films conductivity and it also affects the films optical properties.

germanium ; quantum dots ; ITO ; crystallization ; magnetron sputtering

nije evidentirano