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Pregled bibliografske jedinice broj: 807041

Closely packed Ge quantum dots in ITO matrix: influence of Ge crystallization on optical and electric properties


Car, Tihomir; Nekić, Nikolina; Radić, Nikola; Jerčinović, Marko; Salamon, Krešimir; Bogdanović-Radović, Ivančica; Delač Marion, Ida; Dasović, Jasna; Pivac, Branko; Dražić, Goran et al.
Closely packed Ge quantum dots in ITO matrix: influence of Ge crystallization on optical and electric properties // 22nd International Scientific Meeting on Vacuum Science and Technique: Programme and Book of Abstracts / Kovač, Janez ; Jakša, Gregor (ur.).
Ljubljana: Slovenian Society for Vacuum Technique, 2015. str. 38-38 (poster, međunarodna recenzija, sažetak, znanstveni)


Naslov
Closely packed Ge quantum dots in ITO matrix: influence of Ge crystallization on optical and electric properties

Autori
Car, Tihomir ; Nekić, Nikolina ; Radić, Nikola ; Jerčinović, Marko ; Salamon, Krešimir ; Bogdanović-Radović, Ivančica ; Delač Marion, Ida ; Dasović, Jasna ; Pivac, Branko ; Dražić, Goran ; Ivanda, Mile ; Bernstorff, Sigrid ; Kralj, Marko ; Buljan, Maja

Vrsta, podvrsta i kategorija rada
Sažeci sa skupova, sažetak, znanstveni

Izvornik
22nd International Scientific Meeting on Vacuum Science and Technique: Programme and Book of Abstracts / Kovač, Janez ; Jakša, Gregor - Ljubljana : Slovenian Society for Vacuum Technique, 2015, 38-38

ISBN
978-961-92989-7-8

Skup
22nd International Scientific Meeting on Vacuum Science and Technique

Mjesto i datum
Osilnica, Slovenija, 21-22.05.2015

Vrsta sudjelovanja
Poster

Vrsta recenzije
Međunarodna recenzija

Ključne riječi
Germanium ; quantum dots ; ITO ; crystallization ; magnetron sputtering

Sažetak
Simple methods for fabrication of semiconductor quantum dots in transparent oxide matrices play an important role in various nanotechnology applications. Here we present a method for the low-temperature production of closely packed crystalline Ge QDs embedded in ITO matrix. The films are produced by magnetron sputter deposition followed by thermal annealing. The crystallization of Ge is found to occur already at 300°C, which is significantly lower than the crystallization temperature of Ge produced by the same method in silica or alumina matrices. The dependencies of the conductivity of the films and their optical properties on the materials structure, Ge content in the ITO matrix and the annealing conditions are demonstrated. The crystallization of Ge causes a huge increase in the films conductivity and it also affects the films optical properties.

Izvorni jezik
Engleski

Znanstvena područja
Fizika



POVEZANOST RADA


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Ustanove
Institut za fiziku, Zagreb,
Institut "Ruđer Bošković", Zagreb