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Pregled bibliografske jedinice broj: 777908

Charge storage behavior of nanostructures based on SiGe nanocrystals embedded in Al2O3 matrix


Vieira, M. F. Eliana; Levichev, Sergey; Dias, Carlos J.; Igreja, Rui; Buljan, Maja; Bernstorff, Sigrid; Conde, Olinda; Chahboun, Adil; Rolo Anabela G.; Gomes, Maria J. M.;
Charge storage behavior of nanostructures based on SiGe nanocrystals embedded in Al2O3 matrix // European physical journal B : condensed matter physics, 86 (2013), 7; 336-1 doi:10.1140/epjb/e2013-40124-2 (međunarodna recenzija, članak, znanstveni)


Naslov
Charge storage behavior of nanostructures based on SiGe nanocrystals embedded in Al2O3 matrix

Autori
Vieira, M. F. Eliana ; Levichev, Sergey ; Dias, Carlos J. ; Igreja, Rui ; Buljan, Maja ; Bernstorff, Sigrid ; Conde, Olinda ; Chahboun, Adil ; Rolo Anabela G. ; Gomes, Maria J. M. ;

Izvornik
European physical journal B : condensed matter physics (1434-6028) 86 (2013), 7; 336-1

Vrsta, podvrsta i kategorija rada
Radovi u časopisima, članak, znanstveni

Ključne riječi
Charge storage ; GeSi ; Nanoparticles

Sažetak
The charge storage behavior of nanostructures based on Si1−x Ge x (0 ≤ x ≤ 1) nanocrystals (NCs) in an Al2O3 matrix was investigated. The structures have been grown by RF magnetron sputtering and subsequently annealed at temperatures ranging from 700 °C to 1000 °C for 30 min in nitrogen ambient. The stoichiometry of the SiGe NCs and the alumina crystalline structure were found to be significantly dependent on the RF power and the annealing temperature. The sizes of the SiGe NCs and their distribution were investigated by grazing incidence small angle X-ray scattering (GISAXS). The capacitance-voltage (C-V) and conductance-voltage (G-V) measurements were performed to investigate the charge trapping characteristics of the memory structures. The C-V hysteresis width depends on variations in the crystalline structure resulting from different annealing temperatures. It is also shown that charge injection is governed by the Fowler-Nordheim tunnel mechanism for higher electric fields.

Izvorni jezik
Engleski

Znanstvena područja
Fizika



POVEZANOST RADA


Projekt / tema
098-0982886-2895 - Novi amorfni i nanostrukturirani tankoslojni materijali (Nikola Radić, )

Ustanove
Institut "Ruđer Bošković", Zagreb

Autor s matičnim brojem:
Maja Buljan, (242416)

Časopis indeksira:


  • Current Contents Connect (CCC)
  • Web of Science Core Collection (WoSCC)
    • Science Citation Index Expanded (SCI-EXP)
    • SCI-EXP, SSCI i/ili A&HCI
  • Scopus


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