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Pregled bibliografske jedinice broj: 777908

Charge storage behavior of nanostructures based on SiGe nanocrystals embedded in Al2O3 matrix


Vieira, M. F. Eliana; Levichev, Sergey; Dias, Carlos J.; Igreja, Rui; Buljan, Maja; Bernstorff, Sigrid; Conde, Olinda; Chahboun, Adil; Rolo Anabela G.; Gomes, Maria J. M.;
Charge storage behavior of nanostructures based on SiGe nanocrystals embedded in Al2O3 matrix // European physical journal B : condensed matter physics, 86 (2013), 7; 336-1 doi:10.1140/epjb/e2013-40124-2 (međunarodna recenzija, članak, znanstveni)


CROSBI ID: 777908 Za ispravke kontaktirajte CROSBI podršku putem web obrasca

Naslov
Charge storage behavior of nanostructures based on SiGe nanocrystals embedded in Al2O3 matrix

Autori
Vieira, M. F. Eliana ; Levichev, Sergey ; Dias, Carlos J. ; Igreja, Rui ; Buljan, Maja ; Bernstorff, Sigrid ; Conde, Olinda ; Chahboun, Adil ; Rolo Anabela G. ; Gomes, Maria J. M. ;

Izvornik
European physical journal B : condensed matter physics (1434-6028) 86 (2013), 7; 336-1

Vrsta, podvrsta i kategorija rada
Radovi u časopisima, članak, znanstveni

Ključne riječi
Charge storage ; GeSi ; Nanoparticles

Sažetak
The charge storage behavior of nanostructures based on Si1−x Ge x (0 ≤ x ≤ 1) nanocrystals (NCs) in an Al2O3 matrix was investigated. The structures have been grown by RF magnetron sputtering and subsequently annealed at temperatures ranging from 700 °C to 1000 °C for 30 min in nitrogen ambient. The stoichiometry of the SiGe NCs and the alumina crystalline structure were found to be significantly dependent on the RF power and the annealing temperature. The sizes of the SiGe NCs and their distribution were investigated by grazing incidence small angle X-ray scattering (GISAXS). The capacitance-voltage (C-V) and conductance-voltage (G-V) measurements were performed to investigate the charge trapping characteristics of the memory structures. The C-V hysteresis width depends on variations in the crystalline structure resulting from different annealing temperatures. It is also shown that charge injection is governed by the Fowler-Nordheim tunnel mechanism for higher electric fields.

Izvorni jezik
Engleski

Znanstvena područja
Fizika



POVEZANOST RADA


Projekti:
098-0982886-2895 - Novi amorfni i nanostrukturirani tankoslojni materijali (Radić, Nikola, MZOS ) ( POIROT)

Ustanove:
Institut "Ruđer Bošković", Zagreb

Profili:

Avatar Url Maja Mičetić (autor)

Poveznice na cjeloviti tekst rada:

doi link.springer.com link.springer.com

Citiraj ovu publikaciju:

Vieira, M. F. Eliana; Levichev, Sergey; Dias, Carlos J.; Igreja, Rui; Buljan, Maja; Bernstorff, Sigrid; Conde, Olinda; Chahboun, Adil; Rolo Anabela G.; Gomes, Maria J. M.;
Charge storage behavior of nanostructures based on SiGe nanocrystals embedded in Al2O3 matrix // European physical journal B : condensed matter physics, 86 (2013), 7; 336-1 doi:10.1140/epjb/e2013-40124-2 (međunarodna recenzija, članak, znanstveni)
Vieira, M., Levichev, S., Dias, C., Igreja, R., Buljan, M., Bernstorff, S., Conde, O., Chahboun, A., Rolo Anabela G., Gomes, M. & (2013) Charge storage behavior of nanostructures based on SiGe nanocrystals embedded in Al2O3 matrix. European physical journal B : condensed matter physics, 86 (7), 336-1 doi:10.1140/epjb/e2013-40124-2.
@article{article, author = {Vieira, M. F. Eliana and Levichev, Sergey and Dias, Carlos J. and Igreja, Rui and Buljan, Maja and Bernstorff, Sigrid and Conde, Olinda and Chahboun, Adil and Gomes, Maria J. M.}, year = {2013}, pages = {336-1-336-7}, DOI = {10.1140/epjb/e2013-40124-2}, keywords = {Charge storage, GeSi, Nanoparticles}, journal = {European physical journal B : condensed matter physics}, doi = {10.1140/epjb/e2013-40124-2}, volume = {86}, number = {7}, issn = {1434-6028}, title = {Charge storage behavior of nanostructures based on SiGe nanocrystals embedded in Al2O3 matrix}, keyword = {Charge storage, GeSi, Nanoparticles} }
@article{article, author = {Vieira, M. F. Eliana and Levichev, Sergey and Dias, Carlos J. and Igreja, Rui and Buljan, Maja and Bernstorff, Sigrid and Conde, Olinda and Chahboun, Adil and Gomes, Maria J. M.}, year = {2013}, pages = {336-1-336-7}, DOI = {10.1140/epjb/e2013-40124-2}, keywords = {Charge storage, GeSi, Nanoparticles}, journal = {European physical journal B : condensed matter physics}, doi = {10.1140/epjb/e2013-40124-2}, volume = {86}, number = {7}, issn = {1434-6028}, title = {Charge storage behavior of nanostructures based on SiGe nanocrystals embedded in Al2O3 matrix}, keyword = {Charge storage, GeSi, Nanoparticles} }

Časopis indeksira:


  • Current Contents Connect (CCC)
  • Web of Science Core Collection (WoSCC)
    • Science Citation Index Expanded (SCI-EXP)
    • SCI-EXP, SSCI i/ili A&HCI
  • Scopus


Citati:





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