., Novel Direct-Tunneling-Current (DTC) Method for Channel Length Extraction Beyond Sub-50 nm Gate CMOS (CROSBI ID 483158)
Prilog sa skupa u zborniku | izvorni znanstveni rad | međunarodna recenzija
Podaci o odgovornosti
Hong, S. ; Zhang, Y. ; Luo, Y. ; Suligoj, T. ; Kim, S.D. ; Woo, J.C.S. ; Hradsky, B. ; Li, R. ; Min, B.W. ; Vandooren, A. ; Nguyen, B.Y. ; Wang, K.L.
engleski
., Novel Direct-Tunneling-Current (DTC) Method for Channel Length Extraction Beyond Sub-50 nm Gate CMOS
A novel method for accurate gate length extraction has been developed using direct tunneling current (DTC) through thin gate oxide. Applied to decanano CMOS devices, the proposed method is verified to be free from a severe assumption of unified effective mobility that is one of limitations of conventional method to sub-0.1 *m. The DTC method is also insensitive to doping concentration and gate oxide thinning effect at the corner regions. In addition, we have studied the channel length dependence on gate line-edge roughness by comparing the DTC method and the conventional channel current method. *=micro
gate length extraction; direct tunneling current; short-channel efects
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Podaci o prilogu
2001.
objavljeno
Podaci o matičnoj publikaciji
Proceedings of International Electron Devices Meeting IEDM 2001
Institute of Electrical and Electronics Engineers (IEEE)
Podaci o skupu
International Electron Devices Meeting IEDM 2001
predavanje
02.02.2001-02.02.2001
Sjedinjene Američke Države
