engleski

A Correction of Measured Power MOSFET's Normalized Temperature Response Because of Case Temperature Rise

A method of power MOSFET's normalized temperature response (transient thermal impedance) measurement and correction is presented. During semiconductor device's normalized temperature response measurement it is practically impossible to maintain constant temperature required by a definition of normalized temperature response. Introduced method enables a correction ofthe measurement error caused by the semiconductor device's case temperature rise. It is based on finding semiconductor device's thermal system model parameters and identifying the point on thermal model which belongs to semiconductor device's case. Measurements of power MOSFET's normalized temperature response are made with a help of a computer controlled electrical method, with semiconductor device mounted on real heat sink. A developed software package enables: (i) graphical presentation of temperature responses, (ii) identification of semiconductor device thermal system parameters, and (iii) correction of measurement error caused by semiconductor device's case temperature rise.

Power MOSFET ; transient thermal impedance ; normalized temperature response ; measurement of transient thermal impedance

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