Napredna pretraga

Pregled bibliografske jedinice broj: 763958

Modeling of surface roughness effects on C-V characteristics of ultra thin MOS capacitors


Pivac, Branko; Milanović, Željka; Zulim, Ivan
Modeling of surface roughness effects on C-V characteristics of ultra thin MOS capacitors // 16th International Conference on Thin Films Programme and book of abstracts / Radić, Nikola ; Zorc, Hrvoje (ur.).
Zagreb: Croatian Vacuum Society, 2014. str. 175-176 (poster, međunarodna recenzija, sažetak, znanstveni)


Naslov
Modeling of surface roughness effects on C-V characteristics of ultra thin MOS capacitors
(Modeling of surface roughness effects on C-Vcharacteristics of ultra thin MOS capacitors)

Autori
Pivac, Branko ; Milanović, Željka ; Zulim, Ivan

Vrsta, podvrsta i kategorija rada
Sažeci sa skupova, sažetak, znanstveni

Izvornik
16th International Conference on Thin Films Programme and book of abstracts / Radić, Nikola ; Zorc, Hrvoje - Zagreb : Croatian Vacuum Society, 2014, 175-176

Skup
16th International Conference on Thin Films

Mjesto i datum
Dubrovnik, 13-16.10.2014

Vrsta sudjelovanja
Poster

Vrsta recenzije
Međunarodna recenzija

Ključne riječi
MOS ; C-V ; roughness

Sažetak
Permanent scaling of MOS devices pushes the ultrathin gate dielectrics into sub 2-nm regime. Physical mechanisms such as direct tunneling, surface roughness, quantum confinement, and polysilicon depletion must be accounted for determining the gate leakage current and C-V characteristic. Recently it has been demonstrated that the intrinsic reliability limit is fewer than six atomic layers, which is about 1.5 nm. Such thickness of dielectrics is found not only in modern MOS devices but also in solar cells based on quantum structures. In this work we shall explore the impact of tunneling and surface roughness on the gate capacitance of ultra-thin dielectrics. It will be demonstrated that the surface roughness has a dominant impact on C-V characteristics. We shall also show that the direct tunneling dominates over F-N tunneling for the device leakage current. The results will be discussed in the light of application for solar cells using different dielectrics.

Izvorni jezik
Engleski

Znanstvena područja
Fizika



POVEZANOST RADA


Projekt / tema
098-0982886-2866 - Temeljna svojstva nanostruktura i defekata u poluvodičima i dielektricima (Branko Pivac, )
HRZZ-IP-2013-11-6135 - Poluvodičke kvantne strukture za napredne sklopove (Branko Pivac, )

Ustanove
Fakultet elektrotehnike, strojarstva i brodogradnje, Split,
Tehnički fakultet, Rijeka,
Institut "Ruđer Bošković", Zagreb