engleski

Structural relaxation of Al-W amorphous thin films

The pronounced variation of the electrical resistivity of the amorphous Al-W thin films upon the first heating above the room temperature was examined. Both isochronal and isothermal treatment were employed in order to investigate the effects of film composition, substrate material and substrate temperature, upon the magnitude of relaxation phenomena. In case of isochronal heating, it was found that the observed relaxation effects decrease with the increase of the heating rate, and decrease with the aluminum content in the film. The isothermal annealing at 515 degC for six hours was applied to the Al78W22 amorphous thin films. The effects of substrate material (alumina ceramic, glass and sapphire) and deposition temperature (LN2, RT, 200 degC, and 400 degC) were examined. The relaxation decreases in a sequence of alumina ceramic - glass - sapphire substrates and also with the increase of the substrate temperature. A presumed dominant role of aluminum in the observed effects was checked by the corresponding investigation of Al-Ti and Cu-Ti amorphous thin films.

Alloys; Crystallization; Transition

nije evidentirano