Formation of CdS nanocrystals in SiO2 by ion implantation (CROSBI ID 93891)
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Desnica, Uroš ; Desnica-Franković, Ida-Dunja ; Gamulin, Ozren ; White, C.W. ; Sonder, E. ; Zuhr, R.A.
engleski
Formation of CdS nanocrystals in SiO2 by ion implantation
We present a systematic study of the influence of ion dose and post-implantation annealing on the synthesis and growth of CdS nanocrystals in a SiO2 matrix. Nanocrystals were obtained after implantation of monoenergetic Cd and S ions and subsequent annealing in a very wide range of annealing temperatures, Ta. The average size, as determined from the blue shift of bandgap Eg, varied from 3.5-4.5 to 10 nm, depending on implantation and annealing parameters. For the highest dose, 1017 ions/cm2, the synthesis of CdS phase starts already during implantation. For Ta above 700o C, large nanocrystals (9-10 nm) prevail for all doses. High energy optical transitions, identified as the E1A and E1B transitions of hexagonal CdS, were also observed after annealings at higher temperature.
nanocrystals; CdS; ion implantation; optical absorption
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