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Pregled bibliografske jedinice broj: 74625

Encapsulated Inorganic Resist Technology


Fedynyshyn, Theodore; Doran, Scott; Lind, Michele; Sondi, Ivan; Matijevic, Egon
Encapsulated Inorganic Resist Technology // Proceedings of SPIE, Vol. 3999 / Houlihan, Francis (ur.).
USA: The International Society for Optical Engineering, 2000. str. 627-637 (predavanje, međunarodna recenzija, cjeloviti rad (in extenso), znanstveni)


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Naslov
Encapsulated Inorganic Resist Technology

Autori
Fedynyshyn, Theodore ; Doran, Scott ; Lind, Michele ; Sondi, Ivan ; Matijevic, Egon

Vrsta, podvrsta i kategorija rada
Radovi u zbornicima skupova, cjeloviti rad (in extenso), znanstveni

Izvornik
Proceedings of SPIE, Vol. 3999 / Houlihan, Francis - USA : The International Society for Optical Engineering, 2000, 627-637

Skup
Advances in Resist Technology and Processing VII

Mjesto i datum
Sant Barbara, California, USA, 27-23. 04. 2000

Vrsta sudjelovanja
Predavanje

Vrsta recenzije
Međunarodna recenzija

Ključne riječi
Encapsulated Inorganic Resist Technology (EIRT); Lithography; 248 and 157 nm Wavelength Absorbance

Sažetak
Resolution in traditional single layer organic resists has been limited by the inability to image at aspect ratios (resist height to image width) of much greater than 3:1. Unless plasma etch selectivity increases several fold (an unlikely event with organic based resists) single layer resist chemistry will cease to be practical at sub-100-nm resolution. Multilayer resist schemes offer the capability of increased aspect ratio, but they add to the process complexity and cost. Encapsulated inorganic materials as resist components will be ultimately capable of sub-100-nm resolution with sufficient plasma etch selectivity. The encapsulated inorganic resist technology (EIRT) resist will act as a single layer hard mask compatible with existing resist processing steps. Material evaluation showed that encapsulated inorganic materials have properties compatible with current resist technology. Lithographic evaluations have been performed with electron beam, and with 248 nm and 157 nm projection systems. It was shown that 150-nm imaging is possible with resists having high inorganic material content. In all cases the EIRT resists have shown lithographic performance equivalent to control resists containing no SiO2. Reactive ion etch (RIE) etch rates in oxygen and chlorine plasmas are significantly reduced for resists containing SiO2 nanoparticles as compared to a commercial resist providing a proof of concept that EIRT resists can dramatically improved plasma etch rates.

Izvorni jezik
Engleski

Znanstvena područja
Kemija



POVEZANOST RADA


Projekti:
00981507

Ustanove:
Institut "Ruđer Bošković", Zagreb

Profili:

Avatar Url Ivan Sondi (autor)

Citiraj ovu publikaciju

Fedynyshyn, Theodore; Doran, Scott; Lind, Michele; Sondi, Ivan; Matijevic, Egon
Encapsulated Inorganic Resist Technology // Proceedings of SPIE, Vol. 3999 / Houlihan, Francis (ur.).
USA: The International Society for Optical Engineering, 2000. str. 627-637 (predavanje, međunarodna recenzija, cjeloviti rad (in extenso), znanstveni)
Fedynyshyn, T., Doran, S., Lind, M., Sondi, I. & Matijevic, E. (2000) Encapsulated Inorganic Resist Technology. U: Houlihan, F. (ur.)Proceedings of SPIE, Vol. 3999.
@article{article, editor = {Houlihan, F.}, year = {2000}, pages = {627-637}, keywords = {Encapsulated Inorganic Resist Technology (EIRT), Lithography, 248 and 157 nm Wavelength Absorbance}, title = {Encapsulated Inorganic Resist Technology}, keyword = {Encapsulated Inorganic Resist Technology (EIRT), Lithography, 248 and 157 nm Wavelength Absorbance}, publisher = {The International Society for Optical Engineering}, publisherplace = {Sant Barbara, California, USA} }
@article{article, editor = {Houlihan, F.}, year = {2000}, pages = {627-637}, keywords = {Encapsulated Inorganic Resist Technology (EIRT), Lithography, 248 and 157 nm Wavelength Absorbance}, title = {Encapsulated Inorganic Resist Technology}, keyword = {Encapsulated Inorganic Resist Technology (EIRT), Lithography, 248 and 157 nm Wavelength Absorbance}, publisher = {The International Society for Optical Engineering}, publisherplace = {Sant Barbara, California, USA} }




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