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Encapsulated Inorganic Resist Technology Applied to 157 nm-Lithography

In order to increase plasma etch selectivity in traditional single layer organic resists SiO2 nanoparticles have been added to typical 248-nm resist formulations. Formulation modifications are necessary due to the dissolution acceleration effect of the particle. Surface functionalization of the nanoparticle surfaces with organic groups lessens this effect and allows the inclusion of acid labile groups. This allows for a wider formulation window and limits unexposed film thickness losses (UFTL). Both, t-butyl ester groups and poly (t-butyl acrylate)have been used to achieve this effects. Encapsulated Inorganic Resist Technology (EIRT) can be used as a single layer hard mask compatible with existing resist processing steps and replace complex and costly multilevel resist approaches. Lithographic evaluations have been performed with electron beam, and with 248 and 157-nm projection systems. Greater transparency at 157 nm is achieved by the addition of these materials, thus enabling the use of thicker films. High resolution imaging ids demonstrated at these wavelengths.

Encapsulated Inorganic Resist Technology (EIRT); Lithography; 248 and 157 nm Wavelength Absorbance

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