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Pregled bibliografske jedinice broj: 74624

Encapsulated Inorganic Resist Technology Applied to 157 nm-Lithography


Fedynyshyn, Theodore; Sinta, Roger; Sworin, Michael; Goodman, Russell, Sondi, Ivan; Matijevic, Egon
Encapsulated Inorganic Resist Technology Applied to 157 nm-Lithography // Proceedings of SPIE, Vol. 43405 / Houlihan, Francis (ur.).
USA: The International Society for Optical Engineering, 2001. str. 308-317 (predavanje, međunarodna recenzija, cjeloviti rad (in extenso), znanstveni)


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Naslov
Encapsulated Inorganic Resist Technology Applied to 157 nm-Lithography

Autori
Fedynyshyn, Theodore ; Sinta, Roger ; Sworin, Michael ; Goodman, Russell, Sondi, Ivan ; Matijevic, Egon

Vrsta, podvrsta i kategorija rada
Radovi u zbornicima skupova, cjeloviti rad (in extenso), znanstveni

Izvornik
Proceedings of SPIE, Vol. 43405 / Houlihan, Francis - USA : The International Society for Optical Engineering, 2001, 308-317

Skup
Advances in Resist Technology and Processing XVIII

Mjesto i datum
Santa Clara, California, USA, 25 February - 2 March 2001

Vrsta sudjelovanja
Predavanje

Vrsta recenzije
Međunarodna recenzija

Ključne riječi
Encapsulated Inorganic Resist Technology (EIRT); Lithography; 248 and 157 nm Wavelength Absorbance

Sažetak
In order to increase plasma etch selectivity in traditional single layer organic resists SiO2 nanoparticles have been added to typical 248-nm resist formulations. Formulation modifications are necessary due to the dissolution acceleration effect of the particle. Surface functionalization of the nanoparticle surfaces with organic groups lessens this effect and allows the inclusion of acid labile groups. This allows for a wider formulation window and limits unexposed film thickness losses (UFTL). Both, t-butyl ester groups and poly (t-butyl acrylate)have been used to achieve this effects. Encapsulated Inorganic Resist Technology (EIRT) can be used as a single layer hard mask compatible with existing resist processing steps and replace complex and costly multilevel resist approaches. Lithographic evaluations have been performed with electron beam, and with 248 and 157-nm projection systems. Greater transparency at 157 nm is achieved by the addition of these materials, thus enabling the use of thicker films. High resolution imaging ids demonstrated at these wavelengths.

Izvorni jezik
Engleski

Znanstvena područja
Kemija



POVEZANOST RADA


Projekti:
00981507

Ustanove:
Institut "Ruđer Bošković", Zagreb

Citiraj ovu publikaciju

Fedynyshyn, Theodore; Sinta, Roger; Sworin, Michael; Goodman, Russell, Sondi, Ivan; Matijevic, Egon
Encapsulated Inorganic Resist Technology Applied to 157 nm-Lithography // Proceedings of SPIE, Vol. 43405 / Houlihan, Francis (ur.).
USA: The International Society for Optical Engineering, 2001. str. 308-317 (predavanje, međunarodna recenzija, cjeloviti rad (in extenso), znanstveni)
Fedynyshyn, T., Sinta, R., Sworin, M., Goodman, Russell, Sondi, Ivan & Matijevic, E. (2001) Encapsulated Inorganic Resist Technology Applied to 157 nm-Lithography. U: Houlihan, F. (ur.)Proceedings of SPIE, Vol. 43405.
@article{article, editor = {Houlihan, F.}, year = {2001}, pages = {308-317}, keywords = {Encapsulated Inorganic Resist Technology (EIRT), Lithography, 248 and 157 nm Wavelength Absorbance}, title = {Encapsulated Inorganic Resist Technology Applied to 157 nm-Lithography}, keyword = {Encapsulated Inorganic Resist Technology (EIRT), Lithography, 248 and 157 nm Wavelength Absorbance}, publisher = {The International Society for Optical Engineering}, publisherplace = {Santa Clara, California, USA} }
@article{article, editor = {Houlihan, F.}, year = {2001}, pages = {308-317}, keywords = {Encapsulated Inorganic Resist Technology (EIRT), Lithography, 248 and 157 nm Wavelength Absorbance}, title = {Encapsulated Inorganic Resist Technology Applied to 157 nm-Lithography}, keyword = {Encapsulated Inorganic Resist Technology (EIRT), Lithography, 248 and 157 nm Wavelength Absorbance}, publisher = {The International Society for Optical Engineering}, publisherplace = {Santa Clara, California, USA} }




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