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Capacitance Behaviour of np Crystalline Silicon and n-i-p Amorphous-silicon Photodiode for Color Detection

The detection of fundamental components of light red-green-blue is based on transient behavior of a np silicon photodiode. Applied small voltage step to a photodiode illuminated with constant visible light, instantaneously changes the space-charge charge and quasi-neutral charges. The instantaneous changes of charge corresponds to dark current and photocurrent. The photocurrent is wavelength-dependent. Therefore, bias voltage switching simulation under different monochromatic and chromatic illumination condition are carried out to investigate the transient behavior. The Fast Fourier Transform (FFT) is used characterize the wavelength-dependent capacitance. The simulation results will be compared with experimental one obtained with amorphous silicon (a-Si:H) n-i-p photodiode. The obtained results demonstrate that the one-terminal standard devices wavelength dependent capacitance can be used for color detection.

color detection ; crystalline silicon ; amorphous silicon

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