Pretražite po imenu i prezimenu autora, mentora, urednika, prevoditelja

Napredna pretraga

Pregled bibliografske jedinice broj: 742915

Modeling of surface roughness effects on C-V characteristics of ultra thin MOS capacitors


Pivac, Branko; Milanović, Željka; Zulim, Ivan
Modeling of surface roughness effects on C-V characteristics of ultra thin MOS capacitors // Proceedings of International Conference on Thin Films, ICTF16
Dubrovnik, Hrvatska, 2014. (poster, međunarodna recenzija, sažetak, znanstveni)


CROSBI ID: 742915 Za ispravke kontaktirajte CROSBI podršku putem web obrasca

Naslov
Modeling of surface roughness effects on C-V characteristics of ultra thin MOS capacitors

Autori
Pivac, Branko ; Milanović, Željka ; Zulim, Ivan

Vrsta, podvrsta i kategorija rada
Sažeci sa skupova, sažetak, znanstveni

Izvornik
Proceedings of International Conference on Thin Films, ICTF16 / - , 2014

Skup
16th International Conference on Thin Films

Mjesto i datum
Dubrovnik, Hrvatska, 13.-16.10.2014

Vrsta sudjelovanja
Poster

Vrsta recenzije
Međunarodna recenzija

Ključne riječi
ultrathin dielectrics; surface roughness; direct tunneling; Fowler-Nordheim tunneling; C-V characteristics

Sažetak
Permanent scaling of MOS devices pushes the ultrathin gate dielectrics into sub 2-nm regime. Physical mechanisms such as direct tunneling, surface roughness, quantum confinement, and polysilicon depletion must be accounted for determining the gate leakage current and C-V characteristic. Recently it has been demonstrated that the intrinsic reliability limit is fewer than six atomic layers, which is about 1.5 nm. Such thickness of dielectrics is found not only in modern MOS devices but also in solar cells based on quantum structures. In this work we shall explore the impact of tunneling and surface roughness on the gate capacitance of ultra-thin dielectrics. It will be demonstrated that the surface roughness has a dominant impact on C-V characteristics. We shall also show that the direct tunneling dominates over F-N tunneling for the device leakage current. The results will be discussed in the light of application for solar cells using different dielectrics.

Izvorni jezik
Engleski

Znanstvena područja
Fizika, Elektrotehnika



POVEZANOST RADA


Ustanove:
Fakultet elektrotehnike, strojarstva i brodogradnje, Split,
Tehnički fakultet, Rijeka,
Institut "Ruđer Bošković", Zagreb

Profili:

Avatar Url Branko Pivac (autor)

Avatar Url Željka Milanović (autor)

Avatar Url Ivan Zulim (autor)


Citiraj ovu publikaciju

Pivac, Branko; Milanović, Željka; Zulim, Ivan
Modeling of surface roughness effects on C-V characteristics of ultra thin MOS capacitors // Proceedings of International Conference on Thin Films, ICTF16
Dubrovnik, Hrvatska, 2014. (poster, međunarodna recenzija, sažetak, znanstveni)
Pivac, B., Milanović, Ž. & Zulim, I. (2014) Modeling of surface roughness effects on C-V characteristics of ultra thin MOS capacitors. U: Proceedings of International Conference on Thin Films, ICTF16.
@article{article, year = {2014}, keywords = {ultrathin dielectrics, surface roughness, direct tunneling, Fowler-Nordheim tunneling, C-V characteristics}, title = {Modeling of surface roughness effects on C-V characteristics of ultra thin MOS capacitors}, keyword = {ultrathin dielectrics, surface roughness, direct tunneling, Fowler-Nordheim tunneling, C-V characteristics}, publisherplace = {Dubrovnik, Hrvatska} }
@article{article, year = {2014}, keywords = {ultrathin dielectrics, surface roughness, direct tunneling, Fowler-Nordheim tunneling, C-V characteristics}, title = {Modeling of surface roughness effects on C-V characteristics of ultra thin MOS capacitors}, keyword = {ultrathin dielectrics, surface roughness, direct tunneling, Fowler-Nordheim tunneling, C-V characteristics}, publisherplace = {Dubrovnik, Hrvatska} }




Contrast
Increase Font
Decrease Font
Dyslexic Font