Napredna pretraga

Pregled bibliografske jedinice broj: 740844

Growth of anisotropic Ge quantum dot lattices in alumina matrix


Buljan, Maja; Roschupkina, O.; Šantić, Ana; Holy, Vaclav; Baehtz, C.; Muecklich, A.; Horak, L.; Valeš, V.; Radić, Nikola; Bernstorff, Sigrid; Grenzer, Joerg
Growth of anisotropic Ge quantum dot lattices in alumina matrix, 2013. (highlights).


Naslov
Growth of anisotropic Ge quantum dot lattices in alumina matrix

Autori
Buljan, Maja ; Roschupkina, O. ; Šantić, Ana ; Holy, Vaclav ; Baehtz, C. ; Muecklich, A. ; Horak, L. ; Valeš, V. ; Radić, Nikola ; Bernstorff, Sigrid ; Grenzer, Joerg

Izvornik
Elettra Highlights 2012-2013

Vrsta, podvrsta
Ostale vrste radova, highlights

Godina
2013

Ključne riječi
Ge quantum dot; anisotropic lattices; alumina matrix

Sažetak
An anisotropic lattice of Ge quantum dots embedded in amorphous alumina was produced by magnetron sputtering deposition. A specific deposition geometry with oblique incidence of Ge and Al2O3 adparticles was used to achieve the anisotropy. The observed quantum dot ordering is explained by a combination of directional diffusion of Ge and Al2O3 adparticles and a shadowing process which occurs during deposition as a result of the specific surface morphology. The prepared material shows a strong anisotropy of the electrical conductivity in different directions parallel to the sample surface.

Izvorni jezik
Engleski

Znanstvena područja
Fizika



POVEZANOST RADA


Projekt / tema
098-0982886-2859 - Sinergija nanofaza i nanokompozita (Maja Buljan, )
098-0982886-2895 - Novi amorfni i nanostrukturirani tankoslojni materijali (Nikola Radić, )

Ustanove
Institut "Ruđer Bošković", Zagreb