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Growth of anisotropic Ge quantum dot lattices in alumina matrix (CROSBI ID 775702)

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Buljan, Maja ; Roschupkina, O. ; Šantić, Ana ; Holy, Vaclav ; Baehtz, C. ; Muecklich, A. ; Horak, L. ; Valeš, V. ; Radić, Nikola ; Bernstorff, Sigrid et al. Growth of anisotropic Ge quantum dot lattices in alumina matrix // Elettra Highlights 2012-2013. 2013.

Podaci o odgovornosti

Buljan, Maja ; Roschupkina, O. ; Šantić, Ana ; Holy, Vaclav ; Baehtz, C. ; Muecklich, A. ; Horak, L. ; Valeš, V. ; Radić, Nikola ; Bernstorff, Sigrid ; Grenzer, Joerg

engleski

Growth of anisotropic Ge quantum dot lattices in alumina matrix

An anisotropic lattice of Ge quantum dots embedded in amorphous alumina was produced by magnetron sputtering deposition. A specific deposition geometry with oblique incidence of Ge and Al2O3 adparticles was used to achieve the anisotropy. The observed quantum dot ordering is explained by a combination of directional diffusion of Ge and Al2O3 adparticles and a shadowing process which occurs during deposition as a result of the specific surface morphology. The prepared material shows a strong anisotropy of the electrical conductivity in different directions parallel to the sample surface.

Ge quantum dot; anisotropic lattices; alumina matrix

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Podaci o izdanju

Elettra Highlights 2012-2013

2013.

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objavljeno

Povezanost rada

Fizika