Growth of anisotropic Ge quantum dot lattices in alumina matrix (CROSBI ID 775702)
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Podaci o odgovornosti
Buljan, Maja ; Roschupkina, O. ; Šantić, Ana ; Holy, Vaclav ; Baehtz, C. ; Muecklich, A. ; Horak, L. ; Valeš, V. ; Radić, Nikola ; Bernstorff, Sigrid ; Grenzer, Joerg
engleski
Growth of anisotropic Ge quantum dot lattices in alumina matrix
An anisotropic lattice of Ge quantum dots embedded in amorphous alumina was produced by magnetron sputtering deposition. A specific deposition geometry with oblique incidence of Ge and Al2O3 adparticles was used to achieve the anisotropy. The observed quantum dot ordering is explained by a combination of directional diffusion of Ge and Al2O3 adparticles and a shadowing process which occurs during deposition as a result of the specific surface morphology. The prepared material shows a strong anisotropy of the electrical conductivity in different directions parallel to the sample surface.
Ge quantum dot; anisotropic lattices; alumina matrix
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Podaci o izdanju
Elettra Highlights 2012-2013
2013.
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