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Structure and transport properties of different quantum structures in SiO2 matrix

Silicon and germanium nanoparticles or quantum dots (QDs) embedded in transparent glass matrix have properties radically different from the bulk semiconductors and present a great potential for application in electronic and optoelectronic devices. Due to quantum confinement properties the optical bandgap of quantum dots based materials can be tuned by varying the nanoparticle size. Moreover, novel electronic properties emerge due to single electron charging, the nature of nanocrystal surface and the interface with dielectric matrix. These properties may be exploted for the fabrication of nanoscale electronic devices or advanced solar cells. In this work we explored structural and transport properties of QDs based superstructures for advanced solar cells. Magnetron cosputtering was used for deposition of spacer dielectric (SiO2) and dielectric mixed with semiconductor material (Si or Ge) upon suitable thermal treatment a superstructure of QDs was formed. Structural properties were explored using small-angle X-ray scattering and X-ray diffraction at grazing incidence. Transport properties were explored by I-V measurement in dark and in the light together with C-V characterization. Obtained results were modeled with the known transport mechanisms for QDs containing materials. A special emphasis is given to space charge limited current and hopping conductivity mechanism.

structure ; transport properties ; quantum structures ; SiO2 matrix

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