engleski

Structural-relaxation-induced bondlength and bondangle changes in amorphized Ge

Low-temperature structural relaxation in amorphised Ge has been characterised by extended X-ray absorption fine structure spectroscopy (EXAFS) and Raman spectroscopy. For the first time, a relaxation-temperature-dependent decrease in the mean value and asymmetry of the interatomic distance distribution has been shown to accompany the well-documented reduction in bondangle distribution. Whilst the initial state of the unrelaxed, as-implanted, amorphous Ge was ion-dose-dependant, relaxation at 200 °C yielded a common ion-dose-independent interatomic distance distribution. The results provide further compelling support for the defect annihilation model of structural relaxation, and imply that the measured heat release on structural relaxation should be implant-condition dependent.

amorphous Ge; EXAFS; structural relaxation; Raman

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