engleski

Evaluation of the precipitate contribution to the infrared absortion of interstitial oxygen measurements in silicon

The spurious contribution of oxide precipitates to the infrared absorption of interstitial oxygen in silicon is determined from spectra collected at 7 K for samples with different initial interstitial oxygen Oi concentration subjected to a three-step thermal treatment. These data can be used to correct the residual Oi values determined at room temperature following the standard procedure from the intenisty of the 1107 cm-1 absorption band. The error in residual Oi is found to reach values on the order of 2x1017 atoms/cm3 for samples with initial Oi content higher than 6.5x1017 atoms/cm3.

silicon; defects; oxygen; infrared

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