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Band structure engineering through orbital interaction for enhanced thermoelectric power factor (CROSBI ID 211153)

Prilog u časopisu | Pismo (znanstveno) | međunarodna recenzija

Zhu, Hong ; Sun, Wenhao ; Armiento, Rickard ; Lazić, Predrag ; Ceder, Gerbrand Band structure engineering through orbital interaction for enhanced thermoelectric power factor // Applied physics letters, 104 (2014), 8; 082107-1-082107-5. doi: 10.1063/1.4866861

Podaci o odgovornosti

Zhu, Hong ; Sun, Wenhao ; Armiento, Rickard ; Lazić, Predrag ; Ceder, Gerbrand

engleski

Band structure engineering through orbital interaction for enhanced thermoelectric power factor

Band structure engineering for specific electronic or optical properties is essential for the further development of many important technologies including thermoelectrics, optoelectronics, and microelectronics. In this work, we report orbital interaction as a powerful tool to finetune the band structure and the transport properties of charge carriers in bulk crystalline semiconductors. The proposed mechanism of orbital interaction on band structure is demonstrated for IV-VI thermoelectric semiconductors. For IV-VI materials, we find that the convergence of multiple carrier pockets not only displays a strong correlation with the s-p and spin-orbit coupling but also coincides with the enhancement of power factor. Our results suggest a useful path to engineer the band structure and an enticing solid-solution design principle to enhance thermoelectric performance.

performance bulk thermoelectrics; semiconductors; efficiency; alloys; states; GETE; PBTE

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Podaci o izdanju

104 (8)

2014.

082107-1-082107-5

objavljeno

0003-6951

10.1063/1.4866861

Povezanost rada

Fizika

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