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The Solar Cells and Photodiodes Capacitance

Integrating photodiodes and solar cells in one system can enable the usage of solar cells as a source for powering the photodiodes in an APS active pixel image sensor. The solar cell and photodiode capacitances are one of the most important parameters for designing this system. The time domain technique at low frequency is used to measure the solar cells and photodiodes capacitance. The measurements have been carried out on a-Si:H p-i-n cells under forward and reverse bias voltages, in dark and under blue LED light illumination. It is observed, that the deep defect states of i-layer contribute to the capacitance at various bias voltages. Also, the capacitance achieves the upper limit around the built-in potential. The proposed method can be used for further development of solar cell and photodiode integrated systems and various sensors.

solar cells; photodiode; capacitance; CV time domain technique

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