Characterization of Silicon Surface Passivation by Photoluminescence/Raman Spectroscopy (CROSBI ID 614721)
Prilog sa skupa u zborniku | sažetak izlaganja sa skupa | međunarodna recenzija
Podaci o odgovornosti
Đerek, Vedran ; Scharber, Markus C. ; Enengl Christina ; Głowacki, Eric D. ; Kosović, Marin ; Sariciftci, Niyazi Serdar ; Ivanda, Mile
engleski
Characterization of Silicon Surface Passivation by Photoluminescence/Raman Spectroscopy
Maximization of the power conversion efficiency (PCE) in nanostructured silicon/ PEDOT:PSS hybrid solar cells is an active area of photovoltaic research, due to the reduced thermal budget in production of such devices in comparison to conventional silicon solar cells [1]. Surface passivation of silicon at silicon/organic interface was found to be essential for high efficiency of silicon-based photovoltaics. Surface defects and dangling bonds significantly increase the recombination rate of minority carriers, may pin the Fermi level and cause undesirable band bending at silicon interfaces [2]. Passivation methods for planar silicon surfaces that are currently available [3] are not always compatible with the nanostructured and hybrid organic/inorganic devices, for which appropriate passivation should be developed. Measuring the state of surface passivation is essential in this process. We present a method for the characterization of surface passivation of silicon by simultaneous band gap photoluminescence and Raman spectroscopy.
photoluminescence; Raman; Silicon; Surface passivation
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Podaci o prilogu
1560-1561.
2014.
objavljeno
Podaci o matičnoj publikaciji
XXIV. International Conference on Raman Spectroscopy Conference Proceedings
Popp, Jürgen ; Deckert, Volker
Jena: Leibniz Institute of PhotonicTechnology e.V. (IPHT)
Podaci o skupu
XXIV. International Conference on Raman Spectroscopy
poster
10.08.2014-15.08.2014
Jena, Njemačka