Capacitance Behavior of np Crystalline Silicon and n-i-p Amorphous Photodiode for Color Detection (CROSBI ID 481521)
Prilog sa skupa u zborniku | izvorni znanstveni rad | međunarodna recenzija
Podaci o odgovornosti
Gradišnik, Vera ; Pavlović, Mladen ; Biljanović, Petar ; Pivac, Branko, Zulim, Ivan
engleski
Capacitance Behavior of np Crystalline Silicon and n-i-p Amorphous Photodiode for Color Detection
The detection of fundamental components of light red-green-blue is based on transient behavior of a np silicon photodiode. Applied small voltage step to a photodiode illuminated with constant visible light, instntaneously changes the space-charge charge and quasi-neutral charges. The instantaneous changes of charge corresponds to dark current and photocurrent. The photocurrent is wavelenght-dependent. Therefore, bias voltage switching simulation under different monochromatic and chromatic illumination condition are carried out to investigate the transient behavior. The Fast Fourier Transform (FFT) is used to characterize the wavelenght-dependent capacitance. The simulation results will be compared with experimental one obtained with amorphous silicon (a-Si:H) n-i-p photodiode. The obtained results demonstrate that the one-terminal standard devices wavelenght dependent capacitance can be used for color detection.
color detection; capacitance; space-charge; photocurrent; FFT; wavelenght dependent capacitance
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Podaci o prilogu
11-13-x.
2001.
objavljeno
Podaci o matičnoj publikaciji
Biljanović, Petar; Skala, Karolj
Rijeka: Hrvatska udruga za informacijsku i komunikacijsku tehnologiju, elektroniku i mikroelektroniku - MIPRO
Podaci o skupu
MIPRO 2001 24th International Convention
predavanje
21.05.2001-25.05.2001
Opatija, Hrvatska