The Use of Chemical-Mechanical Polishing and Etch-Back Techniques for Bottom Isolation of Pillar-like Devices (CROSBI ID 481519)
Prilog sa skupa u zborniku | izvorni znanstveni rad | međunarodna recenzija
Podaci o odgovornosti
Suligoj, Tomislav ; Biljanović, Petar ; Wang, K. L.
engleski
The Use of Chemical-Mechanical Polishing and Etch-Back Techniques for Bottom Isolation of Pillar-like Devices
The application of CMP process for the bottom isolation of pillar like devices is investigated. The use of conventional semi-rigid pad with colloidal silica slurry results in low planarization ratio (2.54), while glass pad results in a lot of defects and scratches after the wet etch-back process. The new CMP set up is proposed employing a teflon pad and slurry composed of gamma alumina powder with particles size of 50 nm diluted in DI H_2O with2.5 wt. % of KOH. The planarization ratio of 69 at the beginning of process is achieved with the final SiO_2 surface free of defects and scratches. The process has self-stopping mechanism. The effects of a decreasing removal rate for the SiO_2above pillars, and of an increasing removal rate for the field SiO_2 during the process are explained by the increase of effective contact area and the increase of pressing force on the field SiO_2.
chemical-mechanical polishing;planarization ratio; semi-rigid pad; teflon pad; self-stopping process; removal rate; pillar-like structures
nije evidentirano
nije evidentirano
nije evidentirano
nije evidentirano
nije evidentirano
nije evidentirano
Podaci o prilogu
3-6-x.
2001.
objavljeno
Podaci o matičnoj publikaciji
Proceedings of MIPRO 2001
Biljanović, Petar; Skala, Karolj
Rijeka: Hrvatska udruga za informacijsku i komunikacijsku tehnologiju, elektroniku i mikroelektroniku - MIPRO
Podaci o skupu
MIPRO 2001 24th International Convention
predavanje
21.05.2001-25.05.2001
Opatija, Hrvatska