Effects Of Light Soaking On Amorphous Silicon (CROSBI ID 481404)
Prilog sa skupa u zborniku | izvorni znanstveni rad | međunarodna recenzija
Podaci o odgovornosti
Pivac, Branko ; Kovačević, Ivana ; Zulim, Ivan ; Gradišnik, Vera
engleski
Effects Of Light Soaking On Amorphous Silicon
The effect of light soaking on a-Si:H films is well known as Staebler-Wronski effect, though its complete mechanism is not yet clear. We studied the effect of light soaking with UV, white and sub-gap light on a-Si:H films, as well as the effect of thermal annealing in the dark. It was shown that the light soaking of the films with white and sub-bandgap light in the air did not affect hydrogen concentration from Si-H bonds, and at same time, enhanced oxidation of the films is observed. It means that oxygen incorporation was due to the broken backbonds to Si-H which very likely represent weak bonds. Moreover, it was found that, subgap and white light irradiation produced oxidation, UV light did not, while UV light caused even minor Si-H bonds breaking. Vacuum annealing at 100°C in the dark, on the other hand, caused hydrogen redistribution, enhancing Si-H bonds concentration and recovering broken bonds.
light soaking; amorphous silicon
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Podaci o prilogu
884-887-x.
2000.
objavljeno
Podaci o matičnoj publikaciji
Conference Record Of The 28th IEEE Photovoltaic Specialists Conference
Rohatgi, Ajeet
Piscataway (NJ): Institute of Electrical and Electronics Engineers (IEEE)
Podaci o skupu
IEEE 28th Photovoltaic Specialists Conference
poster
15.09.2000-22.09.2000
Anchorage (AK), Sjedinjene Američke Države