engleski

Phonon-limited hole mobility in sub-20 nm-thick double-gate germanium MOSFETs

Physics-based modeling of hole mobilities in ultra-thin germanium layers is calculated with self-consistent Schödinger-Poisson solver and Kubo-Greenwood formula. Quantum confinement is taken into account for heavy, light and split-off hole band in a double-gate germanium MOSFET structure. Acoustic and optical phonon scattering is taken into consideration in the calculation of hole momentum relaxation time. The observed reduction of mobility in thinner layers is explained by examining the influence of fieldinduced and geometry-induced confinement. Contributions from different hole bands are investigated by calculating band population and respective band mobilities.

ultra-thin body; germanium; MOSFET; hole mobility; quantum confinement; scattering

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