Comparison of RF performance between 20 nm-gate bulk and SOI FinFET (CROSBI ID 611273)
Prilog sa skupa u zborniku | izvorni znanstveni rad | međunarodna recenzija
Podaci o odgovornosti
Krivec, Sabina ; Prgić, Hrvoje ; Poljak, Mirko ; Suligoj, Tomislav
engleski
Comparison of RF performance between 20 nm-gate bulk and SOI FinFET
Due to their 3D architecture, FinFETs exhibit a strong dependence of RF figures-of-merit on device geometry due to large extrinsic resistances and capacitances. We analyze the RF performance of 20-nm gate length FinFETs implemented on either bulk or SOI substrate by using 3D numerical device simulation. SOI and bulk FinFET are compared in terms of cut-off and maximum oscillation frequency, gate capacitance and trans-conductance. We have proposed and investigated the influence of different doping methods that aim at improving the RF figures-of-merit of 20 nm bulk FinFETs while maintaining acceptable DC performance.
FinFET ; bulk ; SOI ; RF performance ; cut-off frequency
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Podaci o prilogu
51-56.
2014.
objavljeno
Podaci o matičnoj publikaciji
Podaci o skupu
MIPRO 2014
predavanje
25.05.2014-29.05.2014
Opatija, Hrvatska