engleski

Quantitative analysis of a-Si1-xCx:H thin films by vibrational spectroscopy and nuclear methods

Thin amorphous hydrogenated silicon-carbon films, a-Si1-xCx:H, were deposited by magnetron sputtering on the heated substrate in composition range from x=0.2 to x=1. The source of silicon atoms was magnetron cathode and working gas was argon-hydrogen mixture. Carbon was introduced in two ways: by addition of benzene vapour into the working gas and by co-deposition of carbon and silicon. The obtained films were investigated by using FTIR spectroscopy, Raman spectroscopy, RBS and ERDA. The composition of films was estimated by FTIR and Raman spectroscopy upon characteristic absorption of molecular bonds. RBS and ERDA measurements were done with He ions using the 1.6 MV 5SDH Pelletron tandem accelerator at Johannes Kepler University in Linz, Austria. The surface barrier detector for the RBS measurements was positioned at 150o°, while the ERDA detection system was placed in the forward direction at 45o. Sample surface was tilted under the 22.5o° to the beam direction. The results of quantitative measurements by above mentioned methods were compared and ability each of applied methods were discussed.

quantitative analysis; IR; Raman; RBS; ERDA

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