engleski

Self-assembly of semiconductor quantum dots in amorphous dielectric matrix

Three-dimensional semiconductor quantum dot lattices embedded in dielectric amorphous matrices are increasingly important in various nanotechnology applications. Two simple methods based on self-assembly have recently been developed for controlled preparation of such materials: (i) Self-assembled growth of quantum dots during magnetron sputtering codeposition, and (ii) Ion-beam irradiation of initially amorphous, semiconductor-rich multilayer films. Both methods yield various three-dimensional quantum dot lattices, differing by the type of spatial ordering, matrix and quantum dots chemical and phase composition, QD's separation, shape, and size distribution. The prepared materials exhibit very interesting size- and ordering- dependent physical properties, with large potential for various applications.

Quantum dots; self-assembly; GISAXS; ion beam irradiation

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